- Part Status :
- Packaging :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,191
In-stock
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
VIEW |
1,715
In-stock
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | |||
|
|
VIEW |
3,916
In-stock
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | |||
|
|
VIEW |
3,514
In-stock
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | |||
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|
VIEW |
1,430
In-stock
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | |||
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|
VIEW |
1,551
In-stock
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | |||
|
|
VIEW |
1,526
In-stock
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | |||
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|
VIEW |
1,296
In-stock
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | |||
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|
VIEW |
2,971
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
VIEW |
688
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
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|
VIEW |
1,780
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
VIEW |
1,051
In-stock
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
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|
VIEW |
1,227
In-stock
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
VIEW |
2,192
In-stock
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
