- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW |
659
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 7.6A/11A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | ||||
VIEW |
1,064
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V |