- Part Status :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
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VIEW |
3,845
In-stock
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Infineon Technologies | MOSFET N/P-CH 30V 4A/3A 8SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W | 8-SO | N and P-Channel | Standard | 30V | 4A, 3A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | |||
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|
VIEW |
3,610
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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|
VIEW |
3,769
In-stock
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Infineon Technologies | MOSFET N/P-CH 30V 4A/3A 8SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W | 8-SO | N and P-Channel | Logic Level Gate | 30V | 4A, 3A | 50 mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | |||
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|
VIEW |
3,131
In-stock
|
Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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|
VIEW |
696
In-stock
|
Infineon Technologies | MOSFET N/P-CH 30V 4A/3A 8SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W | 8-SO | N and P-Channel | Standard | 30V | 4A, 3A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | |||
