- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW |
905
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | |||
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VIEW |
3,610
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
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VIEW |
3,845
In-stock
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Vishay Siliconix | MOSFET 2N-CH 30V 4.9A 1212-8 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | 1.3W | PowerPAK® 1212-8 Dual | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A, 10V | 1.6V @ 250µA | 11nC @ 4.5V | - | |||
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VIEW |
2,227
In-stock
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Diodes Incorporated | MOSFET 2N-CH 30V 4.9A 8-SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.8W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 35 mOhm @ 9A, 10V | 1V @ 250µA (Min) | 17.5nC @ 10V | 796pF @ 25V | |||
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VIEW |
702
In-stock
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Vishay Siliconix | MOSFET 2N-CH 30V 4.9A 1212-8 | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | 1.3W | PowerPAK® 1212-8 Dual | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A, 10V | 1.6V @ 250µA | 11nC @ 4.5V | - | |||
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VIEW |
2,147
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | |||
|
VIEW |
3,458
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 4.9A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 750mW | 8-SOIC | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 20 mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 15V | |||
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VIEW |
1,142
In-stock
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Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | |||
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VIEW |
3,131
In-stock
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Infineon Technologies | MOSFET 2N-CH 30V 4.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||
