- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
18 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||
VIEW |
668
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 500mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
2,058
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.25A 2-2N1D | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ||||
VIEW |
2,229
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A ES6 | - | Obsolete | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 800mA | 240 mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | ||||
VIEW |
1,779
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.25A CST6D | - | Obsolete | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 140mW | CST6D | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ||||
VIEW |
1,641
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.72A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300 mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | ||||
VIEW |
2,209
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2 N-CHANNEL 20V 250MA US6 | - | Active | Cut Tape (CT) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 300mW | US6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 250mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ||||
VIEW |
1,686
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
VIEW |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
VIEW |
1,608
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | ||||
VIEW |
1,471
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.1A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 100mA | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | ||||
VIEW |
3,645
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | ||||
VIEW |
847
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ||||
VIEW |
1,920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
1,520
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.18A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 180mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
VIEW |
2,009
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 4A UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 2W | 6-UDFNB (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 4A | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | ||||
VIEW |
3,912
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A US6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 500mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
1,716
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A US6 | - | Discontinued at Digi-Key | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | N and P-Channel | Logic Level Gate, 1.2V Drive | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
VIEW |
930
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V |