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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Operating Temperature	Mounting Type	Package / Case	Power - Max	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
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	SSM6P47NU,LF(T	RFQ VIEW	PDF RFQ	1,686 In-stock	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 2-2Y1A		-	Active	Cut Tape (CT)	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	1W	6-UDFN (2x2)	2 P-Channel (Dual)	Logic Level Gate	20V	4A	95 mOhm @ 1.5A, 4.5V	1V @ 1mA	4.6nC @ 4.5V	290pF @ 10V
	SSM6N55NU,LF(T	RFQ VIEW	PDF RFQ	881 In-stock	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6		-	Discontinued at Digi-Key	Cut Tape (CT)	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	1W	6-µDFN(2x2)	2 N-Channel (Dual)	Logic Level Gate	30V	4A	46 mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V
	SSM6N58NU,LF	RFQ VIEW	PDF RFQ	3,645 In-stock	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6		-	Active	Cut Tape (CT)	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	1W	6-UDFN (2x2)	2 N-Channel (Dual)	Logic Level Gate, 1.8V Drive	30V	4A	84 mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V
	SSM6P49NU,LF	RFQ VIEW	PDF RFQ	1,065 In-stock	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 2-1Y1A		-	Active	Cut Tape (CT)	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	1W	6-UDFN (2x2)	2 P-Channel (Dual)	Logic Level Gate	20V	4A	45 mOhm @ 3.5A, 10V	1.2V @ 1mA	6.74nC @ 4.5V	480pF @ 10V
	SSM6N61NU,LF	RFQ VIEW	PDF RFQ	2,009 In-stock	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 4A UDFN		-	Active	Cut Tape (CT)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	2W	6-UDFNB (2x2)	2 N-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	4A	33 mOhm @ 4A, 4.5V	1V @ 1mA	3.6nC @ 4.5V	410pF @ 10V
	SSM6L61NU,LF	RFQ VIEW	PDF RFQ	1,261 In-stock	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 4A UDFN6		-	Active	Cut Tape (CT)	-	Surface Mount	6-WDFN Exposed Pad	-	6-UDFN (2x2)	N and P-Channel	Standard	20V	4A	-	-	-	-
	SSM6N57NU,LF	RFQ VIEW	PDF RFQ	930 In-stock	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6		-	Active	Cut Tape (CT)	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	1W	6-µDFN(2x2)	2 N-Channel (Dual)	Standard	30V	4A	46 mOhm @ 2A, 4.5V	1V @ 1mA	4nC @ 4.5V	310pF @ 10V

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