- DC Current Gain (hFE) (Min) @ Ic, Vce :
- Resistor - Emitter Base (R2) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | |
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GLOBAL STOCKS | |||||||||||||||||||||||
VIEW |
3,843
In-stock
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Toshiba Semiconductor and Storage | TRANS 2PNP PREBIAS 0.1W ES6 | - | Obsolete | Tape & Reel (TR) | Surface Mount | SOT-563, SOT-666 | 100mW | ES6 | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 200MHz | 4.7 kOhms | 10 kOhms | ||||
VIEW |
1,634
In-stock
|
Toshiba Semiconductor and Storage | TRANS 2PNP PREBIAS 0.1W ES6 | - | Obsolete | Tape & Reel (TR) | Surface Mount | SOT-563, SOT-666 | 100mW | ES6 | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 4.7 kOhms | 47 kOhms | ||||
VIEW |
2,431
In-stock
|
Toshiba Semiconductor and Storage | TRANS 2PNP PREBIAS 0.1W ES6 | - | Obsolete | Tape & Reel (TR) | Surface Mount | SOT-563, SOT-666 | 100mW | ES6 | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 200MHz | 4.7 kOhms | 4.7 kOhms |