- Part Status :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
- Applied Filters :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,539
In-stock
|
Panasonic Electronic Components | DIODE SCHOTTKY 40V 3A MINI2 | - | Obsolete | Digi-Reel® | Surface Mount | SOD-123F | Mini2-F4-B | Schottky | 3A | 550mV @ 3A | 200µA @ 40V | 40V | Fast Recovery = 200mA (Io) | 25ns | 125°C (Max) | 70pF @ 10V, 1MHz | |||
|
|
VIEW |
2,195
In-stock
|
Panasonic Electronic Components | DIODE SCHOTTKY 40V 2A MINI2 | - | Obsolete | Digi-Reel® | Surface Mount | SOD-123F | Mini2-F4-B | Schottky | 2A | 490mV @ 2A | 200µA @ 40V | 40V | Fast Recovery = 200mA (Io) | 30ns | 125°C (Max) | 70pF @ 10V, 1MHz | |||
|
VIEW |
3,355
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 1.5A CST2C | - | Active | Digi-Reel® | Surface Mount | 0603 (1608 Metric) | CST2C | Schottky | 1.5A | 550mV @ 1.5A | 200µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | 125°C (Max) | 170pF @ 0V, 1MHz | |||
|
VIEW |
3,342
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 1.5A | - | Active | Digi-Reel® | Surface Mount | SC-76, SOD-323 | USC | Schottky | 1.5A | 450mV @ 1A | 200µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | 125°C (Max) | 170pF @ 0V, 1MHz | |||
|
VIEW |
3,801
In-stock
|
Torex Semiconductor Ltd | DIODE SCHOTTKY 40V 1A SOD323A | - | Active | Digi-Reel® | Surface Mount | SC-76, SOD-323 | SOD-323A | Schottky | 1A | 540mV @ 1A | 200µA @ 40V | 40V | Fast Recovery = 200mA (Io) | 25ns | 125°C (Max) | 35pF @ 10V, 1MHz | |||
