- Part Status :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,470
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | 8pF @ 4V, 1MHz | |||
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VIEW |
3,488
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | - | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | 8pF @ 4V, 1MHz | |||
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VIEW |
3,623
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | - | |||
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VIEW |
1,644
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AL | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | - | |||
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VIEW |
3,522
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | 8pF @ 4V, 1MHz | |||
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|
VIEW |
2,834
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | - | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 200nA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 8pF @ 4V, 1MHz | |||
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VIEW |
3,180
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AL | - | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 200nA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 8pF @ 4V, 1MHz | |||
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VIEW |
1,202
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | - | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | - | |||
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VIEW |
2,843
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | SUPERECTIFIER® | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | - | |||
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|
VIEW |
838
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AL | SUPERECTIFIER® | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | - | |||
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|
VIEW |
2,416
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | SUPERECTIFIER® | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 1µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 175°C | - | |||
