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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,834
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | Automotive, AEC-Q101 | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 7pF @ 4V, 1MHz | |||
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VIEW |
1,214
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | Automotive, AEC-Q101 | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.1V @ 1A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 7pF @ 4V, 1MHz | |||
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VIEW |
714
In-stock
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Comchip Technology | DIODE GEN PURP 1KV 1A 2010 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | 2010 (5025 Metric) | 2010 | Standard | 1A | 1V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | - | -65°C ~ 175°C | 8pF @ 4V, 1MHz | |||
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VIEW |
1,665
In-stock
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Comchip Technology | DIODE GEN PURP 1KV 1A 2010 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | 2010 (5025 Metric) | 2010 | Standard | 1A | 930mV @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | - | -65°C ~ 175°C | 8.2pF @ 4V, 1MHz | |||
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VIEW |
2,609
In-stock
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Comchip Technology | DIODE GEN PURP 1KV 1A 1206 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | Nonstandard SMD | 1206/SOD-123 | Standard | 1A | 1.7V @ 1A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | 10pF @ 4V, 1MHz | |||
