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- Current - Reverse Leakage @ Vr :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,011
In-stock
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Comchip Technology | DIODE GEN PURP 100V 3A DO214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | 150°C (Max) | - | |||
|
VIEW |
1,128
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 950mV @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
2,204
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | - | Not For New Designs | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 950mV @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
1,416
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 950mV @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
3,022
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | - | Not For New Designs | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 950mV @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
