Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
GLOBAL STOCKS
SK15E3/TR13
RFQ
VIEW
RFQ
2,828
In-stock
Microsemi Corporation DIODE SCHOTTKY 50V 1A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMBJ) Schottky 1A 720mV @ 1A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -65°C ~ 175°C
SURS8105T3G-VF01
RFQ
VIEW
RFQ
3,689
In-stock
ON Semiconductor DIODE GEN PURP 50V 1A SMB - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB SMB Standard 1A 875mV @ 1A 2µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 175°C
MUR105RLG
RFQ
VIEW
RFQ
3,658
In-stock
ON Semiconductor DIODE GEN PURP 50V 1A AXIAL SWITCHMODE™ Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial Axial Standard 1A 875mV @ 1A 2µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 175°C
ES1A-LTP
RFQ
VIEW
RFQ
2,092
In-stock
Micro Commercial Co DIODE GEN PURP 50V 1A DO214AC - Active Tape & Reel (TR) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 175°C
GF1AHE3/67A
RFQ
VIEW
RFQ
1,443
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO214BA SUPERECTIFIER® Active Tape & Reel (TR) Surface Mount DO-214BA DO-214BA (GF1) Standard 1A 1.1V @ 1A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 175°C
1N4001RLG
RFQ
VIEW
RFQ
2,091
In-stock
ON Semiconductor DIODE GEN PURP 50V 1A DO41 - Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C
US1A-TP
RFQ
VIEW
RFQ
1,128
In-stock
Micro Commercial Co DIODE GEN PURP 50V 1A DO214AC - Active Tape & Reel (TR) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1V @ 1A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -65°C ~ 175°C