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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,490
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
1,151
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
2,623
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
1,864
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
2,372
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 3A DO201AD | - | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
2,923
In-stock
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Bourns Inc. | DIODE GEN PURP 800V 3A SMB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | Standard | 3A | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
2,824
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
1,869
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 5µs | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
1,349
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
1,123
In-stock
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Diodes Incorporated | DIODE GEN PURP 800V 2A DO15 | - | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Standard | 2A | 1.1V @ 2A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
2,937
In-stock
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Micro Commercial Co | DIODE GEN PURP 2.5A 800V R3 | - | Active | Tape & Reel (TR) | Through Hole | R-3, Axial | R-3 | Standard | 2.5A | 1.1V @ 2.5A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
815
In-stock
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Diodes Incorporated | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -65°C ~ 150°C | 40pF @ 4V, 1MHz | |||
