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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,373
In-stock
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Diodes Incorporated | DIODE GEN PURP 400V 1A DO41 | - | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A | 1.2V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
VIEW |
1,018
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
3,323
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,820
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO204AL | - | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,574
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO204AL | - | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.2V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
