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- Diode Type :
- Current - Average Rectified (Io) :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,058
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 5A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 5A | 830µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 160pF @ 1V, 1MHz | |||
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VIEW |
945
In-stock
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Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 5A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Standard | 5A (DC) | 1.8V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - | |||
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VIEW |
3,630
In-stock
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Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 5A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Standard | 5A (DC) | 1.8V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - | |||
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VIEW |
854
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 19A TO252-2 | Z-Rec® | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 19A (DC) | 1.8V @ 5A | 150µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 390pF @ 0V, 1MHz | |||
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VIEW |
2,348
In-stock
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 17.5A TO252 | Zero Recovery™ | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 17.5A (DC) | 1.8V @ 5A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 455pF @ 0V, 1MHz | |||
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VIEW |
1,488
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A TO263AB | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Standard | 5A | 1.8V @ 5A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | - | |||
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VIEW |
2,998
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A TO263AB | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Standard | 5A | 1.8V @ 5A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | - | |||
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VIEW |
1,452
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 5A TO263-2 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 5A | 830µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 160pF @ 1V, 1MHz | |||
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VIEW |
2,369
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 5A DPAK-2 | Amp+™ | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | Silicon Carbide Schottky | 5A | 1.8V @ 5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 317pF @ 1V, 1MHz | |||
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VIEW |
1,484
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 5A TO252-2 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 5A | 33µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 301pF @ 1V, 1MHz | |||
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VIEW |
795
In-stock
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Littelfuse Inc. | DIODE SCHOTTKY 1.2KV 18.1A TO252 | Gen2 | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 18.1A (DC) | 1.8V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
