Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
CR3F-100 TR
RFQ
VIEW
RFQ
3,265
In-stock
Central Semiconductor Corp DIODE GEN PURP 1KV 3A DO201AD - Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 1000V 1000V Fast Recovery = 200mA (Io) 500ns -55°C ~ 125°C 40pF @ 4V, 1MHz
CR3F-060 TR
RFQ
VIEW
RFQ
3,199
In-stock
Central Semiconductor Corp DIODE GEN PURP 600V 3A DO201AD - Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 125°C 40pF @ 4V, 1MHz
DGP30HE3/54
RFQ
VIEW
RFQ
3,155
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.5KV 3A DO201AD - Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 1500V 1500V Standard Recovery >500ns, > 200mA (Io) 20µs -65°C ~ 175°C 40pF @ 4V, 1MHz
CGP30HE3/54
RFQ
VIEW
RFQ
3,108
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.4KV 3A DO201AD SUPERECTIFIER® Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 1400V 1400V Standard Recovery >500ns, > 200mA (Io) 15µs -65°C ~ 175°C 40pF @ 4V, 1MHz
CGP30-E3/54
RFQ
VIEW
RFQ
2,652
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.4KV 3A DO201AD SUPERECTIFIER® Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 1400V 1400V Standard Recovery >500ns, > 200mA (Io) 15µs -65°C ~ 175°C 40pF @ 4V, 1MHz
DGP30-E3/54
RFQ
VIEW
RFQ
3,573
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.5KV 3A DO201AD SUPERECTIFIER® Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 1500V 1500V Standard Recovery >500ns, > 200mA (Io) 20µs -65°C ~ 175°C 40pF @ 4V, 1MHz