Voltage - DC Reverse (Vr) (Max) :
Reverse Recovery Time (trr) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1,067
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Toshiba Semiconductor and Storage DIODE SCHOTTKY 60V 2A MFLAT - Active Tape & Reel (TR) Surface Mount SOD-128 M-FLAT (2.4x3.8) Schottky 2A 580mV @ 2A 200µA @ 60V 60V Fast Recovery = 200mA (Io) - -40°C ~ 150°C -
CMS07(TE12L,Q,M)
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3,069
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Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 2A MFLAT - Active Tape & Reel (TR) Surface Mount SOD-128 M-FLAT (2.4x3.8) Schottky 2A 450mV @ 2A 500µA @ 30V 30V Fast Recovery = 200mA (Io) - -40°C ~ 150°C -
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742
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Toshiba Semiconductor and Storage DIODE GEN PURP 600V 2A MFLAT - Active Tape & Reel (TR) Surface Mount SOD-128 M-FLAT (2.4x3.8) Standard 2A 2V @ 2A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 100ns -40°C ~ 150°C -
CMS11(TE12L,Q,M)
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2,433
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Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 2A MFLAT - Active Tape & Reel (TR) Surface Mount SOD-128 M-FLAT (2.4x3.8) Schottky 2A 550mV @ 2A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -40°C ~ 150°C 95pF @ 10V, 1MHz
CMH08A(TE12L,Q,M)
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1,484
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Toshiba Semiconductor and Storage DIODE GEN PURP 400V 2A MFLAT - Active Tape & Reel (TR) Surface Mount SOD-128 M-FLAT (2.4x3.8) Standard 2A 1.8V @ 2A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -40°C ~ 150°C -