Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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UPR60E3/TR13
RFQ
VIEW
RFQ
3,335
In-stock
Microsemi Corporation DIODE GEN PURP 600V 2A POWERMITE - Active Tape & Reel (TR) Surface Mount DO-216AA Powermite Standard 2A 1.6V @ 2A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 150°C -
SF2L8G R0G
RFQ
VIEW
RFQ
3,290
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC - Active Tape & Reel (TR) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.7V @ 2A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
BYX84TR
RFQ
VIEW
RFQ
1,184
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 600V 2A SOD57 - Active Tape & Reel (TR) Through Hole SOD-57, Axial SOD-57 Avalanche 2A 1V @ 1A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 4µs -55°C ~ 175°C 20pF @ 4V, 1MHz
S2JHR5G
RFQ
VIEW
RFQ
991
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AA Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.15V @ 2A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
S2JHM4G
RFQ
VIEW
RFQ
683
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AA Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.15V @ 2A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
S2J M4G
RFQ
VIEW
RFQ
1,308
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.15V @ 2A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
UPR60/TR7
RFQ
VIEW
RFQ
2,862
In-stock
Microsemi Corporation DIODE GEN PURP 600V 2A POWERMITE - Active Tape & Reel (TR) Surface Mount DO-216AA Powermite Standard 2A 1.6V @ 2A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 150°C -
UPR60/TR13
RFQ
VIEW
RFQ
922
In-stock
Microsemi Corporation DIODE GEN PURP 600V 2A POWERMITE - Active Tape & Reel (TR) Surface Mount DO-216AA Powermite Standard 2A 1.6V @ 2A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 150°C -
SB2J-M3/5BT
RFQ
VIEW
RFQ
1,978
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 2A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.15V @ 2A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 2µs -55°C ~ 150°C 16pF @ 4V, 1MHz
S2J R5G
RFQ
VIEW
RFQ
2,923
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.15V @ 2A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
UPR60E3/TR7
RFQ
VIEW
RFQ
957
In-stock
Microsemi Corporation DIODE GEN PURP 600V 2A POWERMITE - Active Tape & Reel (TR) Surface Mount DO-216AA Powermite Standard 2A 1.6V @ 2A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 150°C -
SF2L8GHR0G
RFQ
VIEW
RFQ
896
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO204AC Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.7V @ 2A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
1N5061TR
RFQ
VIEW
RFQ
1,297
In-stock
Vishay Semiconductor Diodes Division DIODE AVALANCHE 600V 2A SOD57 - Active Tape & Reel (TR) Through Hole SOD-57, Axial SOD-57 Avalanche 2A 1.15V @ 2.5A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 4µs -55°C ~ 175°C 40pF @ 0V, 1MHz
S2J
S2J
RFQ
VIEW
RFQ
1,510
In-stock
ON Semiconductor DIODE GEN PURP 600V 2A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.15V @ 2A 1µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 150°C 30pF @ 4V, 1MHz