- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,688
In-stock
|
Toshiba Semiconductor and Storage | DIODE GEN PURP 200V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Standard | 1A | 980mV @ 1A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - | |||
|
|
VIEW |
2,541
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 580mV @ 1A | 100µA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
|
|
VIEW |
2,404
In-stock
|
Toshiba Semiconductor and Storage | DIODE GEN PURP 600V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Standard | 1A | 1.1V @ 1A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 150°C | - | |||
|
|
VIEW |
2,146
In-stock
|
Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Standard | 1A | 1V @ 1A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 150°C | - | |||
|
|
VIEW |
2,812
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 360mV @ 1A | 1.5mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | - | |||
|
|
VIEW |
1,959
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 450mV @ 1A | 200µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
|
|
VIEW |
1,159
In-stock
|
Toshiba Semiconductor and Storage | DIODE GEN PURP 200V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Standard | 1A | 980mV @ 1A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - | |||
|
|
VIEW |
1,906
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 510mV @ 1A | 100µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | 47pF @ 10V, 1MHz | |||
|
|
VIEW |
3,803
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 20V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 360mV @ 1A | 1mA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 60pF @ 10V, 1MHz | |||
|
|
VIEW |
2,316
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 360mV @ 1A | 1.5mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 40pF @ 10V, 1MHz | |||
|
|
VIEW |
2,114
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 1A SFLAT | - | Active | Tape & Reel (TR) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | Schottky | 1A | 450mV @ 1A | 100µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | 40pF @ 10V, 1MHz | |||
