Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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ES2HR5G
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2,208
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 2A DO214AA Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.7V @ 2A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
ES3HBHM4G
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RFQ
2,606
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO214AA Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 3A 1.7V @ 3A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 30pF @ 4V, 1MHz
ES3HB M4G
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RFQ
1,361
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 3A 1.45V @ 3A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 34pF @ 4V, 1MHz
ES2HM4G
RFQ
VIEW
RFQ
1,601
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 2A DO214AA Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 2A 1.7V @ 2A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
ES3HBHR5G
RFQ
VIEW
RFQ
1,865
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO214AA Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 3A 1.7V @ 3A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 30pF @ 4V, 1MHz
ES3HB R5G
RFQ
VIEW
RFQ
1,172
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO214AA - Active Tape & Reel (TR) Surface Mount DO-214AA, SMB DO-214AA (SMB) Standard 3A 1.45V @ 3A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 34pF @ 4V, 1MHz