- Series :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,132
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
3,584
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.3V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
1,051
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
2,417
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO214AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.3V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
|
VIEW |
3,480
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
2,970
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
3,395
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
1,026
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
1,149
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
2,616
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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|
VIEW |
932
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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VIEW |
1,804
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
