- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,488
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO214AC | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 7pF @ 4V, 1MHz | |||
|
|
VIEW |
2,342
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 1A DO214AC | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 7pF @ 4V, 1MHz | |||
|
VIEW |
3,446
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 800V 500MA DO219AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 1.3V @ 1A | 2µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
3,229
In-stock
|
Taiwan Semiconductor Corporation | DIODE, FAST, 1A, 800V | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | SOD-128 | SOD-128 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 7pF @ 4V, 1MHz | |||
|
VIEW |
3,534
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO214AC | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
VIEW |
3,911
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
VIEW |
1,550
In-stock
|
Taiwan Semiconductor Corporation | DIODE | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | SOD-128 | SOD-128 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 7pF @ 4V, 1MHz | |||
|
|
VIEW |
1,403
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO214AC | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
VIEW |
3,063
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 800V 500MA DO219AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 1.3V @ 1A | 2µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 300ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
1,301
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 800V 500MA DO219AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 1.3V @ 1A | 2µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
|
VIEW |
3,398
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 800V 500MA DO219AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 1.3V @ 1A | 2µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
