Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
3,682
In-stock
Sanken DIODE GEN PURP 600V 500MA AXIAL - Active Tape & Reel (TR) Through Hole Axial Axial Standard 500mA 1.8V @ 600mA 100µA @ 600V 600V Fast Recovery = 200mA (Io) 100ns -40°C ~ 150°C -
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RFQ
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RFQ
2,305
In-stock
Micro Commercial Co DIODE GP 600V 500MA MINI MELF - Obsolete Tape & Reel (TR) Surface Mount DO-213AC, MINI-MELF, SOD-80 Mini MELF Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
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RFQ
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RFQ
1,077
In-stock
Sanken DIODE GEN PURP 600V 500MA AXIAL - Active Tape & Reel (TR) Through Hole Axial - Standard 500mA 1.7V @ 500mA 10µA @ 600V 600V Fast Recovery = 200mA (Io) 400ns -40°C ~ 150°C -
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RFQ
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RFQ
1,041
In-stock
Sanken DIODE GEN PURP 600V 500MA AXIAL - Active Tape & Reel (TR) Through Hole Axial - Standard 500mA 2V @ 500mA 100µA @ 600V 600V Fast Recovery = 200mA (Io) 100ns -40°C ~ 150°C -
RSFJL RTG
RFQ
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RFQ
3,722
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL RQG
RFQ
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RFQ
2,392
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL MQG
RFQ
VIEW
RFQ
3,780
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL MHG
RFQ
VIEW
RFQ
2,797
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL RHG
RFQ
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RFQ
1,246
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL R3G
RFQ
VIEW
RFQ
1,912
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL RUG
RFQ
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RFQ
1,834
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL RFG
RFQ
VIEW
RFQ
1,329
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL MTG
RFQ
VIEW
RFQ
771
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL M2G
RFQ
VIEW
RFQ
3,567
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -55°C ~ 150°C 4pF @ 4V, 1MHz
RSFJL RVG
RFQ
VIEW
RFQ
3,648
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 500MA SUBSMA - Active Tape & Reel (TR) Surface Mount DO-219AB Sub SMA Standard 500mA 1.3V @ 500mA 5µA @ 600V 600V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 4pF @ 4V, 1MHz