- Series :
- Part Status :
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- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,167
In-stock
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Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-3 | PG-TO220-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
3,707
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
781
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
715
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
3,112
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
