- Series :
- Part Status :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
- Applied Filters :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,972
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 16A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 1.7V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,707
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,283
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 16A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 1.7V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
715
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,030
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 10A | 1.7V @ 5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
2,188
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 8A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 8A | 1.7V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
2,644
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 8A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 8A | 1.7V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
683
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 10A | 1.7V @ 5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,030
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A TO220AB | HEXFRED® | Last Time Buy | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 4A | 1.8V @ 4A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 155ns | -55°C ~ 150°C | - | |||
