Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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BYC30W-1200PQ
RFQ
VIEW
RFQ
2,457
In-stock
WeEn Semiconductors DIODE GEN PURP 1.2KV 30A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 3.3V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 65ns 175°C (Max) -
APT30DQ120KG
RFQ
VIEW
RFQ
3,117
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO220 - Active Tube Through Hole TO-220-3 TO-220 [K] Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C -
APT30DQ120BG
RFQ
VIEW
RFQ
3,618
In-stock
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 320ns -55°C ~ 175°C -
ISL9R30120G2
RFQ
VIEW
RFQ
1,365
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 30A TO247 Stealth™ Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 3.3V @ 30A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 100ns -55°C ~ 150°C -