- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 1300V (2)
- 140µA @ 600V (1)
- 180µA @ 650V (4)
- 1µA @ 600V (1)
- 200µA @ 1200V (4)
- 200µA @ 300V (2)
- 200µA @ 600V (4)
- 240µA @ 1200V (2)
- 250µA @ 1200V (1)
- 250µA @ 1300V (1)
- 250µA @ 650V (1)
- 350µA @ 600V (1)
- 400µA @ 650V (1)
- 500µA @ 45V (2)
- 50µA @ 1200V (1)
- 50µA @ 650V (1)
- 62µA @ 1200V (1)
- 90µA @ 600V (1)
- 90µA @ 650V (1)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
33 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,474
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 580pF @ 1V, 1MHz | |||
|
VIEW |
1,755
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
VIEW |
1,408
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
VIEW |
790
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 2.1V @ 10A | 90µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 290pF @ 1V, 1MHz | |||
|
|
VIEW |
2,337
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
2,181
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 350µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 350pF @ 0V, 1MHz | |||
|
VIEW |
2,167
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-3 | PG-TO220-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
|
VIEW |
2,100
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 140µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 1V, 1MHz | |||
|
VIEW |
2,363
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
VIEW |
2,409
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | - | Active | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
|
VIEW |
762
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 650pF @ 1V, 1MHz | |||
|
VIEW |
3,157
In-stock
|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 10A TO220AC | TMBS® | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Schottky | 10A (DC) | 680mV @ 10A | 500µA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | 200°C (Max) | - | |||
|
VIEW |
1,493
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.35V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 220ns | 150°C (Max) | - | |||
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|
VIEW |
3,297
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
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|
VIEW |
1,684
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 150°C (Max) | 430pF @ 1V, 1MHz | |||
|
VIEW |
3,692
In-stock
|
Renesas Electronics America | DIODE GEN PURP 600V 10A TO220FP | - | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | Standard | 10A (DC) | 3V @ 10A | 1µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | 150°C (Max) | - | |||
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|
VIEW |
2,484
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
1,221
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
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|
VIEW |
1,781
In-stock
|
Infineon Technologies | DIODE SCHOTKY 650V 10A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
VIEW |
3,666
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.6V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 550pF @ 1V, 1MHz | |||
|
VIEW |
3,086
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 2A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 167pF @ 0V, 1MHz | |||
|
|
VIEW |
2,000
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
VIEW |
1,967
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 10A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - | |||
|
VIEW |
3,870
In-stock
|
Littelfuse Inc. | DIODE SC SCHOTKY 1200V 10A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
1,893
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1200V 10A TO220-2 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.6V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 550pF @ 1V, 1MHz | |||
|
VIEW |
1,334
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
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|
VIEW |
1,856
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO-220-2 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
|
|
VIEW |
1,549
In-stock
|
Littelfuse Inc. | DIODE SIC SCHOTKY 650V 10A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 290pF @ 1V, 1MHz | |||
|
|
VIEW |
2,958
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
|
VIEW |
882
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 10A (DC) | - | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - | |||
