Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF806GHC0G
RFQ
VIEW
RFQ
3,229
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.3V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF805GHC0G
RFQ
VIEW
RFQ
2,616
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.3V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF808GHC0G
RFQ
VIEW
RFQ
2,644
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF807GHC0G
RFQ
VIEW
RFQ
1,796
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.7V @ 8A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA807HC0G
RFQ
VIEW
RFQ
3,467
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 1000V - Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA806HC0G
RFQ
VIEW
RFQ
960
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA805HC0G
RFQ
VIEW
RFQ
3,198
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA804HC0G
RFQ
VIEW
RFQ
982
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA803HC0G
RFQ
VIEW
RFQ
2,014
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA802HC0G
RFQ
VIEW
RFQ
3,013
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz
GPA801HC0G
RFQ
VIEW
RFQ
1,779
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.1V @ 8A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 50pF @ 4V, 1MHz