- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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28 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,869
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO214AB | - | Obsolete | Bulk | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
1,734
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
1,617
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,403
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
2,011
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,869
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,134
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,430
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,345
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,528
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,545
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,481
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
654
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,445
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,000
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,084
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,121
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
663
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,327
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
629
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,878
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,028
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,133
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,722
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,822
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,744
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,635
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
876
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
