Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SGL41-60-E3/1
RFQ
VIEW
RFQ
1,268
In-stock
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 60V 1A DO213AB - Obsolete Bulk Surface Mount DO-213AB, MELF DO-213AB Schottky 1A 700mV @ 1A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 80pF @ 4V, 1MHz
SF46GHB0G
RFQ
VIEW
RFQ
3,735
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF45GHB0G
RFQ
VIEW
RFQ
1,310
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,486
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.3V @ 6A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,843
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,083
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,881
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,718
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF48GHB0G
RFQ
VIEW
RFQ
2,602
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF47GHB0G
RFQ
VIEW
RFQ
863
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF34GHB0G
RFQ
VIEW
RFQ
1,300
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF33GHB0G
RFQ
VIEW
RFQ
2,093
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32GHB0G
RFQ
VIEW
RFQ
1,156
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF31GHB0G
RFQ
VIEW
RFQ
3,020
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF34G B0G
RFQ
VIEW
RFQ
1,309
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF33G B0G
RFQ
VIEW
RFQ
779
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32G B0G
RFQ
VIEW
RFQ
3,373
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF31G B0G
RFQ
VIEW
RFQ
3,875
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SR006HB0G
RFQ
VIEW
RFQ
693
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 500MA DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 700mV @ 500mA 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 80pF @ 4V, 1MHz
SR005HB0G
RFQ
VIEW
RFQ
1,367
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 500MA DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 700mV @ 500mA 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 80pF @ 4V, 1MHz
SR006 B0G
RFQ
VIEW
RFQ
1,204
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 500MA DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 700mV @ 500mA 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 80pF @ 4V, 1MHz
SR005 B0G
RFQ
VIEW
RFQ
2,821
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 500MA DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 700mV @ 500mA 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 80pF @ 4V, 1MHz
SF48G B0G
RFQ
VIEW
RFQ
3,917
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF47G B0G
RFQ
VIEW
RFQ
3,548
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF46G B0G
RFQ
VIEW
RFQ
3,713
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF45G B0G
RFQ
VIEW
RFQ
2,274
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz