- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
909
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Bulk | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 340µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
VIEW |
1,715
In-stock
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Infineon Technologies | DIODE SILICON 300V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 1V, 1MHz | |||
|
VIEW |
1,945
In-stock
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Infineon Technologies | DIODE GEN PURP 1.2KV 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.6V @ 10A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
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VIEW |
3,244
In-stock
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Infineon Technologies | DIODE GEN PURP 600V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.25V @ 10A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
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VIEW |
1,271
In-stock
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Infineon Technologies | DIODE GEN PURP 600V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.95V @ 10A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | |||
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VIEW |
1,492
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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VIEW |
3,415
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
2,104
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
|
VIEW |
2,692
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
1,505
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
|
VIEW |
1,970
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
|
VIEW |
3,695
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz |