Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1N5400-E3/51
RFQ
VIEW
RFQ
1,107
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 3A DO201AD - Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 30pF @ 4V, 1MHz
SF38GHB0G
RFQ
VIEW
RFQ
1,734
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37GHB0G
RFQ
VIEW
RFQ
1,403
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF36GHB0G
RFQ
VIEW
RFQ
2,011
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF35GHB0G
RFQ
VIEW
RFQ
3,869
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF34GHB0G
RFQ
VIEW
RFQ
1,300
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF33GHB0G
RFQ
VIEW
RFQ
2,093
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32GHB0G
RFQ
VIEW
RFQ
1,156
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF31GHB0G
RFQ
VIEW
RFQ
3,020
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF38G B0G
RFQ
VIEW
RFQ
3,134
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37G B0G
RFQ
VIEW
RFQ
2,430
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF36G B0G
RFQ
VIEW
RFQ
1,345
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF35G B0G
RFQ
VIEW
RFQ
1,528
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF34G B0G
RFQ
VIEW
RFQ
1,309
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF33G B0G
RFQ
VIEW
RFQ
779
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32G B0G
RFQ
VIEW
RFQ
3,373
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HER308G B0G
RFQ
VIEW
RFQ
2,095
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 1000V - Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER307G B0G
RFQ
VIEW
RFQ
3,779
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER306G B0G
RFQ
VIEW
RFQ
3,272
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER305G B0G
RFQ
VIEW
RFQ
3,545
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SR306 B0G
RFQ
VIEW
RFQ
1,700
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 700mV @ 3A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR305 B0G
RFQ
VIEW
RFQ
2,090
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 700mV @ 3A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
HER304G B0G
RFQ
VIEW
RFQ
654
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
HER303G B0G
RFQ
VIEW
RFQ
1,445
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
HER302G B0G
RFQ
VIEW
RFQ
2,000
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
HER301G B0G
RFQ
VIEW
RFQ
3,084
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SR320HB0G
RFQ
VIEW
RFQ
2,142
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 950mV @ 3A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR315HB0G
RFQ
VIEW
RFQ
1,893
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR310HB0G
RFQ
VIEW
RFQ
2,519
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 100V 100V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR309HB0G
RFQ
VIEW
RFQ
3,816
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -