- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 10µA @ 1000V (6)
- 10µA @ 100V (4)
- 10µA @ 200V (7)
- 10µA @ 400V (1)
- 10µA @ 600V (3)
- 10µA @ 800V (1)
- 1µA @ 1000V (1)
- 1µA @ 100V (1)
- 1µA @ 200V (1)
- 1µA @ 400V (1)
- 1µA @ 50V (1)
- 1µA @ 600V (1)
- 2.5µA @ 75V (1)
- 2µA @ 800V (2)
- 5µA @ 1000V (2)
- 5µA @ 100V (2)
- 5µA @ 2000V (1)
- 5µA @ 200V (3)
- 5µA @ 400V (4)
- 5µA @ 50V (3)
- 5µA @ 600V (5)
- 5µA @ 800V (3)
- Operating Temperature - Junction :
- Applied Filters :
54 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,798
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 700MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
1,719
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
3,171
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
1,297
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1.5A DO219 | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 1.5A | 1.1V @ 1A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
3,138
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
2,521
In-stock
|
Diodes Incorporated | STANDARD RECOVERY RECTIFIER SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-214AC, SMA | SMA | Standard | 1A | - | 5µA @ 2000V | 2000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
1,316
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO219AB | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
2,351
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 700MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
640
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 500MA DO219 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 980mV @ 1A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
2,138
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
3,184
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 500MA DO213 | SUPERECTIFIER® | Active | Cut Tape (CT) | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | Standard | 500mA | 1.3V @ 500mA | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -65°C ~ 175°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
2,139
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 400V 700MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
3,685
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 400V 700MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 200V | 400V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
3,637
In-stock
|
ON Semiconductor | DIODE GP 400V 1A SOD123F | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | SOD-123F | SOD-123F | Standard | 1A | 1.1V @ 1A | 1µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
2,330
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 500MA SUBSMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
2,373
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 500MA SUBSMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
3,481
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 500MA SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
2,390
In-stock
|
ON Semiconductor | DIODE GP 600V 1A SOD123F | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | SOD-123F | SOD-123F | Standard | 1A | 1.1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
|
VIEW |
1,609
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 600V 700MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
|
VIEW |
654
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1.5A DO219AB | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 1.5A | 1.1V @ 1A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
1,296
In-stock
|
Central Semiconductor Corp | DIODE GEN PURP 200V 1A SOD123F | - | Active | Cut Tape (CT) | Surface Mount | SOD-123F | SOD-123F | Standard | 1A | 950mV @ 1A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
994
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 500MA DO219 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 980mV @ 1A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
|
VIEW |
676
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GP 800V 500MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 500mA | 1.3V @ 1A | 2µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
|
VIEW |
2,374
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 500MA SUBSMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
|
VIEW |
3,218
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 500MA SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
1,175
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 500MA SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
1,046
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 500MA SUBSMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
1,074
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 500MA SUBSMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
3,392
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 500MA SUBSMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 500mA | 1.3V @ 500mA | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
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|
VIEW |
2,657
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 700MA DO219AB | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
