Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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GI856-E3/54
RFQ
VIEW
RFQ
1,099
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 3A DO201AD - Obsolete Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.25V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 28pF @ 4V, 1MHz
GI826-E3/54
RFQ
VIEW
RFQ
2,604
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 5A P600 - Obsolete Cut Tape (CT) Through Hole P600, Axial P600 Standard 5A 1.1V @ 5A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 300pF @ 4V, 1MHz
GI854-E3/54
RFQ
VIEW
RFQ
996
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 3A DO201AD - Obsolete Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.25V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 28pF @ 4V, 1MHz
GI852-E3/54
RFQ
VIEW
RFQ
2,236
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Obsolete Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.25V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 28pF @ 4V, 1MHz
GI851-E3/54
RFQ
VIEW
RFQ
3,136
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 3A DO201AD - Obsolete Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.25V @ 3A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 28pF @ 4V, 1MHz
GI824-E3/54
RFQ
VIEW
RFQ
3,284
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 5A P600 - Obsolete Cut Tape (CT) Through Hole P600, Axial P600 Standard 5A 1.1V @ 5A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 300pF @ 4V, 1MHz
GI821-E3/54
RFQ
VIEW
RFQ
3,746
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 5A P600 - Obsolete Cut Tape (CT) Through Hole P600, Axial P600 Standard 5A 1.1V @ 5A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 300pF @ 4V, 1MHz
GI822-E3/54
RFQ
VIEW
RFQ
1,664
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 5A P600 - Obsolete Cut Tape (CT) Through Hole P600, Axial P600 Standard 5A 1.1V @ 5A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 300pF @ 4V, 1MHz
GI820-E3/54
RFQ
VIEW
RFQ
859
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 5A P600 - Obsolete Cut Tape (CT) Through Hole P600, Axial P600 Standard 5A 1.1V @ 5A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 300pF @ 4V, 1MHz
1N4937-E3/54
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VIEW
RFQ
2,819
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4936-E3/54
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VIEW
RFQ
3,710
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4934-E3/54
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VIEW
RFQ
2,661
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4935-E3/54
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VIEW
RFQ
3,064
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4933-E3/54
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VIEW
RFQ
3,031
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.2V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 200ns -50°C ~ 150°C 12pF @ 4V, 1MHz