- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,897
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO214AB | - | Active | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 4A | 1.15V @ 4A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,668
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A TO277A | Automotive, AEC-Q101, eSMP® | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 4A | 1.1V @ 4A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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|
VIEW |
2,307
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A TO277A | eSMP® | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 4A | 1.1V @ 4A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
