- Manufacture :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
1,841
In-stock
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Micro Commercial Co | DIODE SCHOTTKY 45V 10A DO214AB | - | Not For New Designs | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (HSMC) | Schottky | 10A | 650mV @ 10A | 1mA @ 45V | 45V | Fast Recovery = 200mA (Io) | -55°C ~ 125°C | 500pF @ 4V, 1MHz | |||
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VIEW |
2,321
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 10A DO214AB | - | Not For New Designs | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 10A | 1.1V @ 10A | 1µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
2,010
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 10A DO214AB | - | Not For New Designs | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 10A | 1.1V @ 10A | 1µA @ 800V | 800V | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
2,575
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A DO214AB | - | Not For New Designs | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 10A | 1.1V @ 10A | 1µA @ 600V | 600V | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
1,993
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 10A DO214AB | - | Not For New Designs | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 10A | 1.1V @ 10A | 1µA @ 400V | 400V | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz |