Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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BAS116GWX
RFQ
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RFQ
3,307
In-stock
Nexperia USA Inc. DIODE GEN PURP 75V 215MA SOD123 Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount SOD-123 SOD-123 Standard 215mA (DC) 1.25V @ 150mA 5nA @ 75V 75V Standard Recovery >500ns, > 200mA (Io) 3µs 150°C (Max) 2pF @ 0V, 1MHz
BAS116GWJ
RFQ
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RFQ
1,733
In-stock
Nexperia USA Inc. DIODE GEN PURP 75V 215MA SOD123 Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount SOD-123 SOD-123 Standard 215mA (DC) 1.25V @ 150mA 5nA @ 75V 75V Standard Recovery >500ns, > 200mA (Io) 3µs 150°C (Max) 2pF @ 0V, 1MHz
SE10DB-M3/I
RFQ
VIEW
RFQ
889
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 3A TO263AC Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount TO-263-3, D²Pak (2 Leads + Tab) Variant TO-263AC (SMPD) Standard 3A 1.15V @ 10A 15µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 3µs -55°C ~ 175°C 67pF @ 4V, 1MHz
BAS116QAZ
RFQ
VIEW
RFQ
1,998
In-stock
Nexperia USA Inc. DIODE GEN PURP 75V 300MA 3DFN Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount 3-XDFN Exposed Pad DFN1010D-3 Standard 300mA (DC) 1.25V @ 150mA 5nA @ 75V 75V Standard Recovery >500ns, > 200mA (Io) 3µs -55°C ~ 150°C 2pF @ 0V, 1MHz
BAV116WSQ-7
RFQ
VIEW
RFQ
655
In-stock
Diodes Incorporated DIODE GEN PURP 85V 215MA SOD323 Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount SC-76, SOD-323 SOD-323 Standard 215mA 1.25V @ 150mA 5nA @ 75V 85V Standard Recovery >500ns, > 200mA (Io) 3µs -55°C ~ 150°C 1.5pF @ 0V, 1MHz
BAV116HWFQ-7
RFQ
VIEW
RFQ
713
In-stock
Diodes Incorporated DIODE GEN PURP 85V 215MA SOD123F Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount SOD-123F SOD-123F Standard 215mA (DC) 1.25V @ 150mA 5nA @ 75V 85V Standard Recovery >500ns, > 200mA (Io) 3µs -65°C ~ 150°C 2pF @ 0V, 1MHz