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- Supplier Device Package :
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- Capacitance @ Vr, F :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,061
In-stock
|
Taiwan Semiconductor Corporation | DIODE, 1A, 600V, AEC-Q101, SOD-1 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | SOD-128 | SOD-128 | Standard | 1A | 1.1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
VIEW |
2,390
In-stock
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ON Semiconductor | DIODE GP 600V 1A SOD123F | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | SOD-123F | SOD-123F | Standard | 1A | 1.1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
2,419
In-stock
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ON Semiconductor | DIODE GEN PURP 600V 1A SMA | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-214AC, SMA | SMA | Standard | 1A | 1.1V @ 1A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
VIEW |
1,609
In-stock
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Vishay Semiconductor Diodes Division | DIODE GP 600V 700MA DO219AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | DO-219AB (SMF) | Standard | 700mA | 1.1V @ 1A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | -55°C ~ 150°C | 4pF @ 4V, 1MHz | |||
|
VIEW |
1,358
In-stock
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ON Semiconductor | DIODE GEN PURP 600V 1A SOD323HE | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | 2-SMD, Flat Lead | SOD-323HE | Standard | 1A | 1.1V @ 1A | 1µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 782ns | -55°C ~ 175°C | 3pF @ 4V, 1MHz | |||
