Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RMPG06JHE3/73
RFQ
VIEW
RFQ
2,702
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Obsolete Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06GHE3/73
RFQ
VIEW
RFQ
1,583
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A MPG06 - Obsolete Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06DHE3/73
RFQ
VIEW
RFQ
2,428
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A MPG06 - Obsolete Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06JHE3_A/73
RFQ
VIEW
RFQ
1,086
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06GHE3_A/73
RFQ
VIEW
RFQ
1,452
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A MPG06 - Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06DHE3_A/73
RFQ
VIEW
RFQ
1,420
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A MPG06 - Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,739
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
986
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,475
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,755
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
SF16GHA0G
RFQ
VIEW
RFQ
3,206
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
SF15GHA0G
RFQ
VIEW
RFQ
1,028
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A DO204AL Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
RMPG06GHE3_A/100
RFQ
VIEW
RFQ
1,842
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 400V 150NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,290
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 1000V - Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,922
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,937
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 1000V - Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,258
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,948
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz
RMPG06JHE3_A/53
RFQ
VIEW
RFQ
1,264
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 200NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06J-E3/100
RFQ
VIEW
RFQ
3,435
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 200NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06GHE3_A/53
RFQ
VIEW
RFQ
1,600
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 400V 150NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06G-E3/100
RFQ
VIEW
RFQ
3,530
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 400V 150NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06DHE3_A/53
RFQ
VIEW
RFQ
1,205
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 200V 150NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06D-E3/100
RFQ
VIEW
RFQ
1,584
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 200V 150NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
RMPG06BHE3_A/53
RFQ
VIEW
RFQ
722
In-stock
Vishay Semiconductor Diodes Division DIODE GPP 1A 100V 150NS MPG06 Automotive, AEC-Q101, Superectifier® Active Tape & Box (TB) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
SF16G A0G
RFQ
VIEW
RFQ
1,616
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
SF15G A0G
RFQ
VIEW
RFQ
997
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,598
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,640
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,165
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 15pF @ 4V, 1MHz