- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
25 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,491
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.3V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 125°C | - | |||
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|
VIEW |
3,914
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 6A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.3V @ 6A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 125°C | - | |||
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|
VIEW |
2,170
In-stock
|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 6A P600 | TMBS® | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Schottky | 6A | 590mV @ 15A | 800µA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | 1290pF @ 4V, 1MHz | |||
|
VIEW |
2,106
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
1,056
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
1,796
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
1,760
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.3V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,260
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
731
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,559
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,855
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,415
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,047
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,570
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,513
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,749
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,363
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
2,293
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
2,951
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
2,959
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
2,765
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
844
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
3,435
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,901
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
3,106
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
