- Part Status :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
23 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,343
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 5A GP20 | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 5A | 950mV @ 5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,952
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 5A GP20 | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 5A | 950mV @ 5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,123
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 5A GP20 | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 5A | 950mV @ 5A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,999
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 5A GP20 | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 5A | 950mV @ 5A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,878
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A GP20 | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 5A | 950mV @ 5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,724
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A GP20 | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 5A | 950mV @ 5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
2,106
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,056
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,415
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,047
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,570
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
974
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,139
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,513
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,749
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
635
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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VIEW |
619
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,435
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
3,229
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
2,701
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,881
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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|
VIEW |
1,897
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
3,614
In-stock
|
Comchip Technology | DIODE GEN PURP 400V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.1V @ 6A | 5µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | |||
