Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Voltage - DC Reverse (Vr) (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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Taiwan Semiconductor Corporation DIODE GEN PURP 150V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF63G A0G
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Taiwan Semiconductor Corporation DIODE GEN PURP 150V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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1,047
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Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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1,570
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF43GHA0G
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3,139
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Taiwan Semiconductor Corporation DIODE GEN PURP 150V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF61G A0G
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3,749
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF42G A0G
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635
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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619
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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3,435
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Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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3,229
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Taiwan Semiconductor Corporation DIODE GEN PURP 100V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF41GHA0G
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2,701
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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1,881
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Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
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1,897
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Taiwan Semiconductor Corporation DIODE GEN PURP 150V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz