Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Operating Temperature - Junction Capacitance @ Vr, F
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1N5400-E3/51
RFQ
VIEW
RFQ
1,107
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 3A DO201AD - Obsolete Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 30pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
1,028
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
2A01GHB0G
RFQ
VIEW
RFQ
3,790
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 2A DO204AC Automotive, AEC-Q101 Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.1V @ 2A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 15pF @ 4V, 1MHz
1N5391GHB0G
RFQ
VIEW
RFQ
2,307
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1.5A DO204AC Automotive, AEC-Q101 Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1.1V @ 1.5A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 15pF @ 4V, 1MHz
1N5400GHB0G
RFQ
VIEW
RFQ
1,322
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
2A01G B0G
RFQ
VIEW
RFQ
3,614
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 2A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.1V @ 2A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 15pF @ 4V, 1MHz
1N4001GHB0G
RFQ
VIEW
RFQ
955
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 10pF @ 4V, 1MHz
1N5391G B0G
RFQ
VIEW
RFQ
3,638
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1.5A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1.1V @ 1.5A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 15pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
876
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 60pF @ 4V, 1MHz
1N5400G B0G
RFQ
VIEW
RFQ
1,659
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N4001G B0G
RFQ
VIEW
RFQ
1,001
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 10pF @ 4V, 1MHz