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- Voltage - Forward (Vf) (Max) @ If :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | |||||||||||||||||||||
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VIEW |
1,621
In-stock
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Micro Commercial Co | DIODE GEN PURP 50V 10A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 10A | 1V @ 10A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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VIEW |
1,028
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
707
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
1,730
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
3,636
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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VIEW |
876
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
800
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | - | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz |