- Series :
- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
826
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 3A | 2V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | - | |||
|
VIEW |
2,225
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1.5A GP20 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | GP20 | Standard | 1.5A | 1.8V @ 1.5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,796
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
VIEW |
3,378
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
|
VIEW |
1,579
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
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|
VIEW |
2,833
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,425
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
958
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
|
VIEW |
911
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
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|
VIEW |
2,051
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | |||
