Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
3,602
In-stock
Renesas Electronics America DIODE SCHOTTKY 600V 15A TO220FP - Active Tube Through Hole TO-220-2 Full Pack TO-220FP-2L Schottky 15A (DC) 1.8V @ 15A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C -
SFAF1608G C0G
RFQ
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RFQ
1,727
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 16A 1.7V @ 16A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SFAF1008GHC0G
RFQ
VIEW
RFQ
2,352
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 10A 1.7V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 140pF @ 4V, 1MHz
HERAF806G C0G
RFQ
VIEW
RFQ
1,036
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SFAF2008G C0G
RFQ
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RFQ
1,583
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 20A 1.7V @ 20A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 150pF @ 4V, 1MHz
SFAF1608GHC0G
RFQ
VIEW
RFQ
1,799
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 16A 1.7V @ 16A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
HERAF1006G C0G
RFQ
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RFQ
3,452
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 10A 1.7V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SFAF2008GHC0G
RFQ
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RFQ
2,246
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 20A 1.7V @ 20A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 150pF @ 4V, 1MHz
SFAF1008G C0G
RFQ
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RFQ
2,918
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 10A 1.7V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 140pF @ 4V, 1MHz
SFAF508G C0G
RFQ
VIEW
RFQ
3,211
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 5A 1.7V @ 5A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SFAF808GHC0G
RFQ
VIEW
RFQ
3,346
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SFAF508GHC0G
RFQ
VIEW
RFQ
2,466
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 5A 1.7V @ 5A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 70pF @ 4V, 1MHz
SFAF808G C0G
RFQ
VIEW
RFQ
2,910
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
HERAF1606G C0G
RFQ
VIEW
RFQ
1,015
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 16A 1.7V @ 16A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 110pF @ 4V, 1MHz