- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
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- Current - Average Rectified (Io) :
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18 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,461
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 6A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 110µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 190pF @ 1V, 1MHz | |||
|
VIEW |
1,877
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 6A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 110µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 190pF @ 1V, 1MHz | |||
|
VIEW |
3,182
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
VIEW |
1,796
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
VIEW |
790
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
VIEW |
1,614
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,788
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,951
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,739
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
3,073
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,636
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,765
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,752
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,717
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,901
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
3,106
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
2,162
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,359
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz |