Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
1,628
In-stock
Micro Commercial Co DIODE GPP 3A DO-201AD - Obsolete - Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 40V - 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 40pF @ 4V, 1MHz
1N5402
RFQ
VIEW
RFQ
1,303
In-stock
ON Semiconductor DIODE GEN PURP 200V 3A DO201AD - Discontinued at Digi-Key Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 30pF @ 4V, 1MHz
1N5402
RFQ
VIEW
RFQ
1,023
In-stock
ON Semiconductor DIODE GEN PURP 200V 3A DO201AD - Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.2V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 30pF @ 4V, 1MHz
60S2-TP
RFQ
VIEW
RFQ
3,073
In-stock
Micro Commercial Co DIODE GEN PURP 200V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1V @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
BY251P-E3/54
RFQ
VIEW
RFQ
3,933
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 3µs -55°C ~ 150°C 40pF @ 4V, 1MHz
1N5402GHB0G
RFQ
VIEW
RFQ
3,130
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402GHA0G
RFQ
VIEW
RFQ
1,789
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402GHR0G
RFQ
VIEW
RFQ
3,302
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402G B0G
RFQ
VIEW
RFQ
1,611
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402G A0G
RFQ
VIEW
RFQ
2,320
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402G R0G
RFQ
VIEW
RFQ
3,374
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,948
In-stock
Micro Commercial Co DIODE GEN PURP 200V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 40pF @ 4V, 1MHz
1N5402-TP
RFQ
VIEW
RFQ
1,077
In-stock
Micro Commercial Co DIODE GEN PURP 200V 3A DO201AD - Obsolete Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 40pF @ 4V, 1MHz
1N5402-TP
RFQ
VIEW
RFQ
1,193
In-stock
Micro Commercial Co DIODE GEN PURP 200V 3A DO201AD - Obsolete Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 40pF @ 4V, 1MHz