- Part Status :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,641
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 3A DO201AD | - | Obsolete | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,757
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 3A DO201AD | - | Obsolete | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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VIEW |
1,197
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | |||
|
VIEW |
728
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
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|
VIEW |
2,307
In-stock
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Micro Commercial Co | DIODE GEN PURP 800V 4A DO201AD | - | Obsolete | Cut Tape (CT) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.85V @ 4A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | - | |||
