Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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HER307G B0G
RFQ
VIEW
RFQ
3,779
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER307G A0G
RFQ
VIEW
RFQ
898
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER307G R0G
RFQ
VIEW
RFQ
700
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
UF5407-E3/73
RFQ
VIEW
RFQ
3,103
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz
UF5407-E3/54
RFQ
VIEW
RFQ
728
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz
UF5407-E3/54
RFQ
VIEW
RFQ
2,243
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 3A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz